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Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81
Figure 1: SEM images in cross section of porous GaAs layers for three different conditions of anodization in ...
Figure 2: (A–C) SEM images in cross section at higher magnification of the porous layers obtained by anodizat...
Figure 3: (A) SEM images of the formation of interrupted GaAs nanowires on the (111)B surface anodized in NaC...
Figure 4: (A) SEM image in cross section of a GaAs(111)B sample anodized at 3 V for 20 min in 1 M HNO3. (B, C...
Figure 5: PL spectra of bulk (curve 1) and anodized (curve 2) GaAs samples measured at a temperature of 10 K.
Figure 6: XRD pattern of the anodized GaAs(111)B sample.
Figure 7: (A) Optical microscopy image of the opened regions in the photoresist on the glass substrate for de...
Figure 8: Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power den...